Ga2O3　is　a　transparent　oxide　dielectric　material　characterized　by　low　loss,　high　refractive　index,　and　excellent　chemical　and　thermal　stability,　suggesting　significant　potential　in　other　spectral　bands　beyond　ultraviolet　detector　and　power　electronics,　although　few　studies　have　been　reported.　Herein,　we　employ　Ga2O3　as　a　dielectric　layer　to　construct　a　metal-insulator-metal　(MIM)　symmetric　metasurface　absorber,　which　achieves　nearly　perfect　absorption　of　99%　in　the　near-infrared　band,　and　can　achieve　a　maximum　redshift　of　1.009　lm　to　1.349　lm　by　changing　the　parameters　of　the　upper　symmetric　metal　array.　Additionally,　If　the　symmetry　of　the　metal　array　is　broken,　the　Fano　effect　will　be　excited,　generating　multiple　resonance　peaks　in　the　absorption　spectrum,　and　more　than　60%　of　the　average　bandwidth　absorption　will　be　achieved　in　the　range　from　0.844　lm　to　1.130　lm　by　the　superposition　of　multiple　resonance　peaks.　More　importantly,　graphene　is　introduced　into　the　asymmetric　structure,　resulting　in　a　dynamic　modulation　of　0.334　lm　by　adjusting　the　Fermi　energy　of　graphene,　while　the　bandwidth　absorption　characteristics　are　retained.　This　work　sheds　valuable　insight　into　the　Ga2O3-based　metasurface　absorber,　thereby　paving　the　way　for　near-infrared　optoelectronic　devices.　©　2013　IEEE.