Incorporating　valley　as　a　degree　of　freedom　into　quantum　anomalous　Hall　systems　offers　a　novel　approach　to　manipulating　valleytronics　in　electronic　transport.　Using　the　Kane–Mele　monolayer　as　a　concrete　model,　we　comprehensively　explore　the　various　topological　phases　in　the　presence　of　inequivalent　exchange　fields　and　reveal　the　roles　of　the　interfacial　Rashba　effect　and　external　electric　field　in　tuning　topological　valley-polarized　states.　We　find　that　valley-polarized　states　can　be　realized　by　introducing　Kane–Mele　spin–orbit　coupling　and　inequivalent　exchange　fields.　Further　introducing　Rashba　spin–orbit　coupling　and　an　electric　field　into　the　system　can　lead　to　diverse　topological　states,　such　as　the　valley-polarized　quantum　anomalous　Hall　effect　with　C　=　±1,　±2　and　valley-contrasting　states　with　C　=　0.　Remarkably,　different　valley-polarized　topological　states　can　be　continuously　tuned　by　varying　the　strength　and　direction　of　the　external　electric　field　in　a　fixed　system.　Our　work　demonstrates　the　tunability　of　topological　states　in　valley-polarized　quantum　anomalous　Hall　systems　and　provides　an　ideal　platform　for　applications　in　electronic　transport　devices　in　topological　valleytronics.(Figure　presented)　©　Higher　Education　Press　2024.