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author:

Tao, Z. (Tao, Z..) [1] | Wang, Y. (Wang, Y..) [2] | He, S. (He, S..) [3] | Li, J. (Li, J..) [4] | Xue, S. (Xue, S..) [5] | Su, Z. (Su, Z..) [6] | Sun, J. (Sun, J..) [7] | Peng, H. (Peng, H..) [8] | Guo, J. (Guo, J..) [9] | Zhu, X. (Zhu, X..) [10]

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Abstract:

Topological physics has evolved from its initial focus on fermionic systems to the exploration of bosonic systems, particularly phononic excitations in crystalline materials. Two-dimensional (2D) topological phonons emerge as promising candidates for future technological applications. Currently, experimental verification of 2D topological phonons has remained exclusively limited to graphene, a constraint that hinders their applications in phononic devices. Here, we report experimental evidence of topological phonons in monolayer hexagonal boron nitride using advanced high-resolution electron energy loss spectroscopy. Our high-precision measurements explicitly demonstrate two topological nodal rings in monolayer hexagonal boron nitride, protected by mirror symmetry, expanding the paradigm of 2D topological phonons beyond graphene. This research not only deepens fundamental understanding of 2D topological phonons, but also establishes a phononic device platform based on wide-bandgap insulators, crucial for advancements in electronics and photonics applications. © 2025 Chinese Physical Society and IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

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  • [ 1 ] [Tao Z.]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 2 ] [Tao Z.]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 3 ] [Wang Y.]Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
  • [ 4 ] [Wang Y.]Beijing Graphene Institute, Beijing, 100095, China
  • [ 5 ] [He S.]School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
  • [ 6 ] [Li J.]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 7 ] [Xue S.]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 8 ] [Xue S.]Department of Physics, Fuzhou University, Fuzhou, 350108, China
  • [ 9 ] [Su Z.]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 10 ] [Su Z.]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 11 ] [Sun J.]School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
  • [ 12 ] [Peng H.]Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
  • [ 13 ] [Peng H.]Beijing Graphene Institute, Beijing, 100095, China
  • [ 14 ] [Guo J.]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 15 ] [Guo J.]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 16 ] [Zhu X.]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 17 ] [Zhu X.]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China

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Source :

Chinese Physics Letters

ISSN: 0256-307X

Year: 2025

Issue: 2

Volume: 42

3 . 5 0 0

JCR@2023

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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