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author:

Cui, L. (Cui, L..) [1] | Zhong, C. (Zhong, C..) [2] | Hu, H. (Hu, H..) [3] | Guo, T. (Guo, T..) [4] | Li, F. (Li, F..) [5]

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Scopus

Abstract:

Quantum dot photodiodes (QLEDs) hold promising potential for next-generation display and lighting devices due to their high emission efficiency, high color purity in the visible region, tunability of emission wavelengths, and low manufacturing costs. However, QLEDs confine a large number of photons inside the device that cannot be utilized, leading to low external quantum efficiency. In this paper, a simple and efficient strategy to construct bilayer light extraction structures is developed based on the self-assembled polystyrene (PS) microspheres embedded in polyvinyl butyral (PVB) film with excellent thermoplasticity. The maximum external quantum efficiency (EQE) of blue-QLED, green-QLED and red-QLED increased from 8.18% to 13.51%, 12.96% to 19.61% and 21.7% to 25%, respectively. It is found that bilayer light extraction structure does not change the light intensity angular distribution of Lambertian emission mode. The bilayer optically coupled structure proposed in this work provides an efficient and stable way for the improvement of QLED performance. © 1980-2012 IEEE.

Keyword:

External light extraction Photonic crystal QLED Self-assembly

Community:

  • [ 1 ] [Cui L.]Fuzhou University, College of Physics and Information Engineering, China
  • [ 2 ] [Zhong C.]Fuzhou University, College of Physics and Information Engineering, China
  • [ 3 ] [Hu H.]Fuzhou University, College of Physics and Information Engineering, China
  • [ 4 ] [Hu H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 5 ] [Guo T.]Fuzhou University, College of Physics and Information Engineering, China
  • [ 6 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 7 ] [Li F.]Fuzhou University, College of Physics and Information Engineering, China
  • [ 8 ] [Li F.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2025

Issue: 3

Volume: 46

Page: 452-455

4 . 1 0 0

JCR@2023

CAS Journal Grade:3

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ESI Highly Cited Papers on the List: 0 Unfold All

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30 Days PV: 1

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