Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor - Details

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Abstract：

Microlight-emitting　diodes　(Micro-LEDs)　offer　numerous　unique　advantages　in　terms　of　materials,　devices,　technologies,　and　process　applications.　To　enable　control　of　LEDs　with　low　current　input,　a　heterojunction　integrated　light-emitting　transistor　(H-LET)　device　is　proposed.　By　vertically　integrating　a　heterojunction　bipolar　transistor　(HBT)　with　a　Micro-LED,　a　multifunctional　optoelectronic　device　capable　of　light　emission,　modulation,　and　driving　functions　is　achieved.　The　structure　incorporates　wide-bandgap　aluminum　gallium　nitride　(AlGaN)　material　into　the　emission　region,　forming　a　heterojunction　with　GaN.　This　significantly　enhances　electron　injection　efficiency　and　current　gain.　Under　low　current　drive,　the　H-LET　device　achieves　a　current　gain　of　up　to　650.　This　results　in　superior　current　regulation　and　high-frequency　response　compared　to　homojunction　light-emitting　transistors.　The　H-LET　shows　significant　potential　for　applications　in　smart　lighting,　high-definition　displays,　radio　frequency　systems,　and　high-speed　communication.　©　2025　Wiley-VCH　GmbH.

Keyword：

gallium nitride heterojunctions microlight-emitting diodes monolithic integration

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[ 1 ] [Lin J.]College of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 2 ] [Su W.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 3 ] [Chen C.]College of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 4 ] [Lin Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 5 ] [Ye J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Zhou X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 7 ] [Zhou X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 8 ] [Guo T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 9 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 10 ] [Wu C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 11 ] [Wu C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 12 ] [Zhang Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 13 ] [Zhang Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China

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Physica Status Solidi (A) Applications and Materials Science

ISSN： 1862-6300

Year： 2025

1 . 9 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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