Currently,　due　to　their　cost-effectiveness　and　excellent　physical　properties,　indium　and　tin　are　frequently　utilized　as　bump　materials　for　micro-light　emitting　diodes　(Micro-LEDs)　and　silicon　complementary　metal–oxide–semiconductor　(CMOS)　devices　to　realize　flip-chip　bonding　technology.　However,　as　micro-LED　pixel　sizes　and　spacings　decrease,　forming　indium　and　tin　bumps　that　meet　bonding　requirements　becomes　challenging.　These　bumps　are　difficult　to　form　an　ideal　spherical　shape　in　the　reflow　process　and　easy　to　cause　interconnection　problems　between　adjacent　pixels,　adversely　affecting　device　performance.　To　address　this,　we　propose　a　novel　Au-Au　bump　technology　for　micro-LED　flip-chip　bonding.　This　technology　aims　to　effectively　avoid　interconnection　issues　while　simplifying　the　micro-LED　process　flow　and　reducing　production　costs.　Therefore,　this　paper　designed　a　micro-LED　device　with　2822　PPI,　640　×　360　resolution,　and　9　μm　pixel　pitch　to　verify　the　feasibility　of　Au-Au　micro-bump　bonding.　During　this　process,　Au　bump　with　diameter　of　3.9　μm　and　6.5　μm　were　fabricated　for　micro-LED　array　and　CMOS　driver　chip　respectively,　followed　by　integrating　them　using　the　flip-chip　bonding　process.　Cross-sectional　analysis　confirmed　the　high　reliability　and　stability　of　the　Au-Au　connection,　enabling　the　micro-LED　device　to　function　properly.　Furthermore,　the　Au　bump　micro-LED　exhibits　greater　electroluminescence　(EL)　intensity　and　brightness　than　the　In　bump　micro-LED,　potentially　due　to　the　optical　losses　incurred　during　the　preparation　of　indium　bumps　within　the　micro-LED　chip.　©　2025　Elsevier　B.V.