Two-dimensional　van　der　Waals　materials,　with　atomic-level　thickness　and　unique　electronic　structures,　have　tremendous　potential　in　electronic　device　applications,　making　them　highly　desirable　for　research　in　high-performance　non-volatile　memory.　Here,　we　report　a　method　for　the　van　der　Waals　epitaxial　growth　of　air-stable　and　uniformly　distributed　thin　films　of　a　1T-CrS2　single　crystal,　based　on　a　simple　chemical　vapor　deposition　technique　using　a　binary　metal　precursor　co-reaction　growth　mechanism　controlled　by　the　evaporation　rate　of　the　precursor.　The　corresponding　1T-CrS2　electronic　devices　can　maintain　their　electrical　performance　without　degradation　for　up　to　one　month　in　air.　Based　on　this,　we　have　constructed　a　floating-gate　memory　device　with　a　full　van　der　Waals　heterostructure,　exhibiting　a　large　storage　window　ratio　(approximately　79%),　a　high　on/off　ratio　(10(7)),　and　stability　for　over　1000　cycles.　The　device　demonstrates　excellent　multi-level　data　storage　stability　and　can　be　optically　programmed　with　stable　operation　using　532　nm　laser　pulses,　showcasing　outstanding　optoelectronic　storage　performance.　The　excellent　electrical　stability　of　these　two-dimensional　materials,　the　non-volatile　nature　of　the　devices,　and　the　stable　multi-level　storage　characteristics　present　enormous　potential　for　the　integration　of　high-performance　non-volatile　memory.