Translated Title
Optimization of Contact Resistance in IGZO Field-effect Transistors Fabricated Using Atomic Layer Deposition
Translated Abstract
Indium gallium zinc oxide(IGZO)possesses advantages such as a wide bandgap,high mobility,and compatibility with CMOS back-end-of-line processes,making it suitable for next-generation high-density three-dimensional stacked memories.As the dimensions of IGZO field-effect transistors(FETs)continue to shrink,the source-drain contact resistance becomes a dominant factor in the device＇s total resistance in the on-state.Therefore,optimizing the contact resistance of IGZO FETs has become a critical research issue.In this study,IGZO deposited by atomic layer deposition was used as the channel to fabricate FETs,investigating the influence of contact metal types and annealing processes on the contact resistance of IGZO FETs.The results indicate that the contact resistances of nickel and titanium were comparable before annealing.However,after annealing at 250℃ for 2 hours in an Ar/O2 atmosphere,the contact resistance of IGZO FETs with titanium contacts decreased to 8.3％of that with nickel con-tacts,achieving a contact resistance as low as 0.86 kΩ·µm,with a simultaneous enhancement in threshold voltage shift for enhancement-mode devices.Meanwhile,IGZO FETs with an ultra-short channel length(Lch=80 nm)were fabricated,exhibiting a high on-state current of 412.2 µ A/μm,a subthreshold swing of 88.6 mV/dec,and a low drain-induced barrier lowering coefficient of 0.02 V/V.These results demonstrate that high-performance IGZO FETs can be achieved by optimizing the contact metal type and annealing conditions,providing new insights for large-scale practical applications of IGZO technology.
Translated Keyword
atomic layer deposition
contact resistance
field effect transistor
indium gallium zinc oxide
Access Number
WF:perioarticalzgjcdl202406014
