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author:

Zhang, H. (Zhang, H..) [1] | Ju, X. (Ju, X..) [2] | Jiang, H. (Jiang, H..) [3] | Yang, D. (Yang, D..) [4] | Wei, R. (Wei, R..) [5] | Hu, W. (Hu, W..) [6] | Lu, X. (Lu, X..) [7] | Zhu, M. (Zhu, M..) [8]

Indexed by:

Scopus CSCD

Abstract:

The next-generation computing system is required to perform 1018 floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices. (Figure presented.) © Science China Press 2024.

Keyword:

boron nitride high thermal conductivity low-power memory neuromorphic computing vertically-aligned

Community:

  • [ 1 ] [Zhang H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Zhang H.]Fuzhou University-Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Jinjiang Science and Education Park, Fuzhou University, Jinjiang, 362200, China
  • [ 3 ] [Ju X.]Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
  • [ 4 ] [Jiang H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 5 ] [Yang D.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 6 ] [Wei R.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 7 ] [Hu W.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 8 ] [Lu X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 9 ] [Zhu M.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 10 ] [Zhu M.]Fuzhou University-Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Jinjiang Science and Education Park, Fuzhou University, Jinjiang, 362200, China

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Source :

Science China Materials

ISSN: 2095-8226

Year: 2024

Issue: 6

Volume: 67

Page: 1907-1914

6 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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