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[期刊论文]

Amorphous Ga2O3-based solar-blind photodetectors on crystalline and amorphous substrates: A comparative study

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author:

Peng, K. (Peng, K..) [1] | Xue, D. (Xue, D..) [2] | Lin, W. (Lin, W..) [3] | Unfold

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Scopus

Abstract:

Amorphous Ga2O3 thin films were deposited on SiO2 and sapphire substrates by pulsed magnetron sputtering (PSD) at room temperature, respectively. Corresponding amorphous Ga2O3 thin film photodetectors were prepared. The oxygen vacancies and defects of the interface between films and substrates were found to determine the discrepancy by comparing the performance between these two photodetectors. Amorphous Ga2O3 photodetectors on SiO2 had highly performances with a responsivity of 417 A/W, detectivity of 7.84 × 1012 Jones, and external quantum efficiency of 2.01 × 105 %. © 2024 Elsevier Ltd

Keyword:

Amorphous Ga2O3 Photodetectors

Community:

  • [ 1 ] [Peng K.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Xue D.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 3 ] [Lin W.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Lv P.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China

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Source :

Materials Science in Semiconductor Processing

ISSN: 1369-8001

Year: 2024

Volume: 179

4 . 2 0 0

JCR@2023

Cited Count:

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30 Days PV: 0

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