Monolithic Integration of GaN-Based Transistors and Micro-LED - Details

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Abstract：

Micro-LED　is　considered　an　emerging　display　technology　with　significant　potential　for　high　resolution,　brightness,　and　energy　efficiency　in　display　applications.　However,　its　decreasing　pixel　size　and　complex　manufacturing　process　create　challenges　for　its　integration　with　driving　units.　Recently,　researchers　have　proposed　various　methods　to　achieve　highly　integrated　micro-structures　with　driving　unit.　Researchers　take　advantage　of　the　high　performance　of　the　transistors　to　achieve　low　power　consumption,　high　current　gain,　and　fast　response　frequency.　This　paper　gives　a　review　of　recent　studies　on　the　new　integration　methods　of　micro-LEDs　with　different　types　of　transistors,　including　the　integration　with　BJT,　HEMT,　TFT,　and　MOSFET.　©　2024　by　the　authors.

Keyword：

display micro-LED monolithic integration

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[ 1 ] [He H.]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
[ 2 ] [Huang J.]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
[ 3 ] [Tao T.]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
[ 4 ] [Zhi T.]College of Electronic and Optical Engineering, College of Flexible Electronics, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
[ 5 ] [Zhang K.]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 6 ] [Zhang K.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 7 ] [Zhuang Z.]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
[ 8 ] [Yan Y.]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
[ 9 ] [Liu B.]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China

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Source ：

Nanomaterials

ISSN： 2079-4991

Year： 2024

Issue： 6

Volume： 14

4 . 4 0 0

JCR@2023

CAS Journal Grade：3

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ESI Highly Cited Papers on the List： 0 Unfold All

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