High　and　uniform　absorption　capabilities　of　terahertz　(THz)　waves　in　an　ultra‐broadband　range　is　desirable　for　many　THz　functional　devices.　Nowadays,　it　is　still　challenging　to　fabricate　flexible　THz　absorbers　with　a　uniformly　high　absorptance　across　the　entire　THz　band　merely　based　on　traditional　bulk　materials.　Engineered　metamaterials　absorbers　utilize　impedance　matching　to　reduce　the　surface　reflection　at　a　single　frequency,　and　can　achieve　near‐unity　power　absorption　within　a　relatively　narrow　bandwidth.　In　this　work,　a　fabrication　strategy　combining　a　femtosecond‐laser　microprocessing　process　and　a　two‐step‐transfer　technique　is　demonstrated　for　the　realization　of　vertically‐aligned　carbon　nanotube　(VACNT)　arrays　with　pyramid‐shaped　unit　cells　for　THz　wave　absorptions.　To　transfer　the　structured　VACNT　array　from　the　silicon　to　the　flexible　PDMS/Cu/PET　substrate,　the　temperature　and　pressure　dependences　of　the　transfer　process　are　systematically　investigated.　The　fabricated　THz　absorber　demonstrates　an　average　power　absorptance　over　98.9%　from　0.1　to　2.5　THz,　and　can　function　well　in　bended　states　and　after　300　times　bending　cycles.　The　proposed　fabrication　strategy　is　expected　to　be　used　for　the　patterning　of　VACNTs　and　other　nanomaterials,　and　advance　the　development　of　novel　THz　devices　for　various　applications.