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author:

Zhang, Y. (Zhang, Y..) [1] | Cheng, H. (Cheng, H..) [2] | Chen, X. (Chen, X..) [3] | Zheng, Y. (Zheng, Y..) [4]

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Abstract:

Two-dimensional (2D) Sn-based perovskites have emerged as a promising alternative to Pb-based perovskites due to their nontoxic nature. However, Sn2+ ions tend to get oxidized to Sn4+ during the synthesis process, leading to crystalline defects and rapid nonradiative transitions, which limits their applications. In this study, we present a facile molecular doping strategy for (C18H35NH3)2SnBr4 perovskite by introducing o-phenylenediamine (oPD) in the precursor solution. The oPD serves a dual role: it not only acts as an electron donor, creating a reducing environment to suppress the oxidation of Sn2+, but also functions as a chelating agent, forming stable compounds with Sn2+. This approach results in 20% oPD doped (C18H35NH3)2SnBr4 perovskite, which exhibits a high photoluminescence quantum yield (PLQY) of 95.3% and excellent stability against oxygen. Furthermore, UV-pumped orange and white light-emitting diodes (LEDs) with a CIE coordinate (0.562, 0.431, 0.327, and 0.346) were produced using oPD-doped 2D tin-based perovskite powders, respectively. These findings suggest that the doping strategy has great potential to enhance the stability of 2D Sn-based perovskites and facilitate their application in the field of lighting devices. © 2023 American Chemical Society.

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  • [ 1 ] [Zhang Y.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Zhang Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
  • [ 3 ] [Cheng H.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 4 ] [Cheng H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
  • [ 5 ] [Chen X.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 6 ] [Zheng Y.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 7 ] [Zheng Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China

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Source :

Journal of Physical Chemistry C

ISSN: 1932-7447

Year: 2023

Issue: 49

Volume: 127

Page: 23827-23834

3 . 3

JCR@2023

3 . 3 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:3

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 1

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