The　photolithographic　patterning　of　fine　quantum　dot　(QD)　films　is　of　great　significance　for　the　construction　of　QD　optoelectronic　device　arrays.　However,　the　photolithography　methods　reported　so　far　either　introduce　insulating　photoresist　or　manipulate　the　surface　ligands　of　QDs,　each　of　which　has　negative　effects　on　device　performance.　Here,　we　report　a　direct　photolithography　strategy　without　photoresist　and　without　engineering　the　QD　surface　ligands.　Through　cross-linking　of　the　surrounding　semiconductor　polymer,　QDs　are　spatially　confined　to　the　network　frame　of　the　polymer　to　form　high-quality　patterns.　More　importantly,　the　wrapped　polymer　incidentally　regulates　the　energy　levels　of　the　emitting　layer,　which　is　conducive　to　improving　the　hole　injection　capacity　while　weakening　the　electron　injection　level,　to　achieve　balanced　injection　of　carriers.　The　patterned　QD　light-emitting　diodes　(with　a　pixel　size　of　1.5　μm)　achieve　a　high　external　quantum　efficiency　of　16.25%　and　a　brightness　of　＞1.4　×　105　cd/m2.　This　work　paves　the　way　for　efficient　high-resolution　QD　light-emitting　devices.　©　2024　American　Chemical　Society