Metal/semiconductor　thin　films　are　a　class　of　unique　materials　that　have　widespread　technological　application,　particularly　in　the　field　of　microelectronic　devices.　New　strategies　of　fractal　assessment　for　Pd/Ge　bilayer　films　formed　at　Various　annealing　temperatures　are　of　fundamental　importance　in　the　development　of　micro/nanodevices.　Herein,　Pd/Ge　bilayer　films　with　interesting　fractal　nanoclusters　were　successfully　prepared　by　evaporation　techniques.　Temperature-dependent　properties　of　resistance　and　fractal　dimensions　in　Pd/Ge　bilayer　films　with　self-similar　Ge　fractal　nanoclusters　were　investigated　in　detail.　Experimental　results　indicated　that　the　fractal　crystallization　behavior　and　film　resistance　in　Pd/Ge　bilayer　films　are　influenced　significantly　by　annealing　temperatures　and　fractal　dimensions.　The　measurements　of　film　resistance　confirmed　that　there　is　an　evident　relationship　between　the　film　resistance　and　the　fractal　dimension.　These　phenomena　were　reasonably　explained　by　the　random　tunneling　junction　network　mechanism.