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author:

Gao, Dongdong (Gao, Dongdong.) [1] | Wang, Yirui (Wang, Yirui.) [2] | Liu, Yi (Liu, Yi.) [3] | Sun, Huiping (Sun, Huiping.) [4] | Wu, Minghong (Wu, Minghong.) [5] (Scholars:吴明红) | Zhang, Haijiao (Zhang, Haijiao.) [6]

Indexed by:

SCIE

Abstract:

The interfacial engineering plays an important role in enhancing the electrochemical properties of graphene-based hybrid materials for energy conversion and storage. Herein, we propose a facile interfacial engineering route for achieving a novel type of SnS2/N-doped graphene (SnS2/NG) composite with superior lithium storage capability. Interestingly, the SnS2 particles formed show two totally different morphologies including ultrasmall nanoparticles about 5 nm and ultrathin nanosheets, and they are strongly coupled with nitrogen-doped graphene, giving rise to a unique 0D/2D heterostructure. In the process, the multiple roles of the 3-aminophenol (AP) linker are well identified by combining the experimental results with the theoretical calculations, where a strong interface is successfully constructed between SnS2 and functionalized graphene. The electrochemical test results demonstrate that the as made SnS2/NG composite exhibits a high lithium storage capacity (1101.3 mAh g(-1) at 100 mA g(-1)), superior cycling stability (a capability fading of 0.04% per cycle for 200 cycles at 100 mA g(-1)), as well as a good rate retention. Such a unique hierarchical nanostructure and the strong interfacial interaction between 0D/2D SnS2 and nitrogen-doped graphene highlight the lithium storage performance of SnS2/NG. (C) 2018 Elsevier Inc. All rights reserved.

Keyword:

2D materials Interfacial engineering Lithium storage N-doped graphene SnS2

Community:

  • [ 1 ] [Gao, Dongdong]Shanghai Univ, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 2 ] [Zhang, Haijiao]Shanghai Univ, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 3 ] [Sun, Huiping]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 4 ] [Wu, Minghong]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 5 ] [Wang, Yirui]Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China
  • [ 6 ] [Liu, Yi]Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China
  • [ 7 ] [Wang, Yirui]Shanghai Univ, Int Ctr Quantum & Mol Struct, Dept Phys, Shanghai 200444, Peoples R China
  • [ 8 ] [Liu, Yi]Shanghai Univ, Int Ctr Quantum & Mol Struct, Dept Phys, Shanghai 200444, Peoples R China

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Source :

JOURNAL OF COLLOID AND INTERFACE SCIENCE

ISSN: 0021-9797

Year: 2019

Volume: 538

Page: 116-124

7 . 4 8 9

JCR@2019

9 . 4 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 24

SCOPUS Cited Count: 23

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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