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author:

Lei, Minyang (Lei, Minyang.) [1] | Liu, Jun (Liu, Jun.) [2] | Huang, Yanbin (Huang, Yanbin.) [3] | Dong, Yulian (Dong, Yulian.) [4] | Zhou, Siyu (Zhou, Siyu.) [5] | Zhao, Huaping (Zhao, Huaping.) [6] | Wang, Zhijie (Wang, Zhijie.) [7] | Wu, Minghong (Wu, Minghong.) [8] (Scholars:吴明红) | Lei, Yong (Lei, Yong.) [9] | Wang, Zhanguo (Wang, Zhanguo.) [10]

Indexed by:

SCIE

Abstract:

The full utilization of incident light is vitally important for boosting the photoelectrochemical activity of photoelectrodes. Herein, we introduce Ni-BiVO4 nanoarrays for mediating the photoelectrochemical water splitting by optimizing the optical modes. Highly ordered Ni-BiVO4 nanoarrays were fabricated using a nanoimprinted AAO templating technique. By controlling the thickness of BiVO4, we efficiently regulate the photoelectrochemical activity, and the photocurrent was up to 0.91 mA cm(-2) at 1.4 V versus Ag/AgCl under 100 mWcm(-2) in the visible light, which is 3.25 times that of a flat Ni-BiVO4 electrode with the same deposition cycles of BiVO4. The optimal efficiency of a Ni-BiVO4 nanoarrray-based photoelectrode can be attributed to the optimal morphology, which has the lowest reflection, the strongest scattering and the induced strongest absorption for the incident light among the nanoarrays samples with different thickness of BiVO4. This work demonstrates the importance of the optimization of optical modes in the nanoarray photoelectrode in order to boost photoelectrochemical activity.

Keyword:

absorption Ni-BiVO4 nanoarrays optical mode photoelectrochemical water splitting reflection scattering

Community:

  • [ 1 ] [Lei, Minyang]Shanghai Univ, Sch Environm & Chem Engn, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 2 ] [Dong, Yulian]Shanghai Univ, Sch Environm & Chem Engn, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 3 ] [Zhou, Siyu]Shanghai Univ, Sch Environm & Chem Engn, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 4 ] [Wu, Minghong]Shanghai Univ, Sch Environm & Chem Engn, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 5 ] [Liu, Jun]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 6 ] [Huang, Yanbin]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 7 ] [Wang, Zhijie]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 8 ] [Wang, Zhanguo]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 9 ] [Liu, Jun]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 10 ] [Huang, Yanbin]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 11 ] [Wang, Zhijie]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 12 ] [Wang, Zhanguo]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 13 ] [Liu, Jun]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 14 ] [Huang, Yanbin]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 15 ] [Wang, Zhijie]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 16 ] [Wang, Zhanguo]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 17 ] [Zhao, Huaping]Tech Univ Ilmenau, Fachgebiet Angew Nanophys, Inst Phys, D-98693 Ilmenau, Germany
  • [ 18 ] [Lei, Yong]Tech Univ Ilmenau, Fachgebiet Angew Nanophys, Inst Phys, D-98693 Ilmenau, Germany
  • [ 19 ] [Zhao, Huaping]Tech Univ Ilmenau, IMN MacroNano ZIK, D-98693 Ilmenau, Germany
  • [ 20 ] [Lei, Yong]Tech Univ Ilmenau, IMN MacroNano ZIK, D-98693 Ilmenau, Germany

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Source :

NANOTECHNOLOGY

ISSN: 0957-4484

Year: 2019

Issue: 44

Volume: 30

3 . 5 5 1

JCR@2019

2 . 9 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 9

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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