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[期刊论文]

Effect of Defects on Performance of All Inorganic Perovskite Solar Cells; [缺 陷 对 全 无 机 钙 钛 矿 太 阳 能 电 池 性 能 的 影 响]

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author:

Yao, G. (Yao, G..) [1] | Wen, C. (Wen, C..) [2] | Liu, J. (Liu, J..) [3] | Unfold

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EI Scopus PKU CSCD

Abstract:

The effects of defects on the performance of all inorganic perovskite solar cells was studied using a one-dimensional solar cell simulation software SCAPS. It is found that in the device ITO/SnO2/CsPbI3/CuI/Au,the density of the defects at the CuI/CsPbI3 interface and in the CsPbI3 photoactive layer has dramatically influence on the performance of the device. With the increase of the defect density,the open-circuit voltage,short-circuit current,filling factor,and power conversion efficiency of the device all decrease,especially when the defect density exceeds 1015 cm-3. On the contrary,the defects at the CsPbI3/SnO2 interface have almost no effect on device performance. By optimizing the defect density of the device,the thickness and doping concentration of the photoactive layer,a power conversion efficiency higher than 20% can be obtained in the all inorganic perovskite solar cells. © 2023 Chines Academy of Sciences. All rights reserved.

Keyword:

all inorganic defect :perovskite solar cell simulation

Community:

  • [ 1 ] [Yao G.]Fujian Key Laboratory for Advanced Micro-nano Photonics Technology and Devices, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou, 362000, China
  • [ 2 ] [Wen C.]Fujian Key Laboratory for Advanced Micro-nano Photonics Technology and Devices, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou, 362000, China
  • [ 3 ] [Wen C.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362200, China
  • [ 4 ] [Liu J.]Fujian Key Laboratory for Advanced Micro-nano Photonics Technology and Devices, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou, 362000, China
  • [ 5 ] [Liu J.]College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou, 350117, China
  • [ 6 ] [Su Z.]Fujian Key Laboratory for Advanced Micro-nano Photonics Technology and Devices, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou, 362000, China

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

CN: 22-1116/O4

Year: 2023

Issue: 11

Volume: 44

Page: 2033-2040

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

30 Days PV: 4

查看更多>>操作日志

管理员  2024-09-16 21:22:17  更新被引

管理员  2024-08-05 18:51:30  更新被引

管理员  2024-07-29 07:13:11  更新被引

颜晓玉  2024-04-09 15:05:19  数据初审

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