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Abstract:
本实用新型提出基于二硫化钼的宽带可调太赫兹吸波器,所述吸波器从顶部至底部依次设有二硫化钼阵列层、中间介质层、金属层;所述二硫化钼阵列层以按规则图形周期性排列的多个二硫化钼单元组成,在高载流子浓度下呈现二硫化钼的类金属性质,具备对特定频段的入射太赫兹波的高吸收率;本实用新型用二维材料替代传统金属超表面的吸波器设计,实现了对太赫兹波的宽带可调吸收,结构简单、调制功能优异、吸收带宽极宽、对入射角度和偏振不敏感。
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Patent Info :
Type: 实用新型
Patent No.: CN202220131724.X
Filing Date: 2022-01-19
Publication Date: 2022-06-28
Pub. No.: CN216850342U
公开国别: 中国
Applicants: 福州大学
Legal Status: 授权
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 9
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