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author:

Zhou, Zehua (Zhou, Zehua.) [1] | Chen, Lu (Chen, Lu.) [2] | Huang, Qiufeng (Huang, Qiufeng.) [3] | Deng, Zhonghua (Deng, Zhonghua.) [4] | Liu, Zhuguang (Liu, Zhuguang.) [5] | Huang, Jiquan (Huang, Jiquan.) [6] | Guo, Wang (Guo, Wang.) [7] | Chen, Jian (Chen, Jian.) [8]

Indexed by:

EI

Abstract:

This study introduces transparent MgO ceramics produced via simply vacuum sintering at 1200–1500 °C by optimal incorporation of MgF2 as a sintering additive. The effect of MgF2 content and sintering temperature on the densification process, optical, and thermal properties of MgO ceramics is presented with emphasis on its function as a sintering aid and adverse effect of MgF2 evaporation in the condition of high MgF2 content or high sintering temperature. MgO ceramic with 1.0 mol% MgF2 sintered at 1300 °C exhibits the highest relative density of 99.95% with average grain size of 17.46 μm. The in-line transmittance attains 60% at 1000 nm and >80% in the infrared range (3.8–6.8 μm), without absorption bands originated from the carbon contamination. The corresponding room-temperature thermal conductivity reaches 47.25 W/(mK). These results demonstrate that MgF2 is an outstanding sintering additive for the preparation transparent MgO ceramics. © 2023 Elsevier Ltd and Techna Group S.r.l.

Keyword:

Additives Fluorine compounds Magnesia Sintering Temperature Thermal conductivity

Community:

  • [ 1 ] [Zhou, Zehua]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 2 ] [Zhou, Zehua]College of Chemistry, Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Chen, Lu]School of Rare Earths, University of Science and Technology of China, Hefei; 230026, China
  • [ 4 ] [Huang, Qiufeng]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 5 ] [Huang, Qiufeng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 6 ] [Deng, Zhonghua]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 7 ] [Deng, Zhonghua]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 8 ] [Liu, Zhuguang]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 9 ] [Liu, Zhuguang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 10 ] [Huang, Jiquan]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 11 ] [Huang, Jiquan]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 12 ] [Guo, Wang]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 13 ] [Guo, Wang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 14 ] [Chen, Jian]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 15 ] [Chen, Jian]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China

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Source :

Ceramics International

ISSN: 0272-8842

Year: 2023

Issue: 20

Volume: 49

Page: 32868-32873

5 . 1

JCR@2023

5 . 1 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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