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author:

He, L. (He, L..) [1] | Cheng, J. (Cheng, J..) [2] | Zhao, L. (Zhao, L..) [3] | Chen, X. (Chen, X..) [4] | Zou, X. (Zou, X..) [5] | Zhang, C. (Zhang, C..) [6] | Li, J. (Li, J..) [7]

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Scopus

Abstract:

Tin-based perovskites are promising for realizing lead-free perovskite solar cells; however, there remains a significant challenge to achieving high-performance tin-based perovskite solar cells. In particular, the device fill factor was much lower than that of other photovoltaic cells. Therefore, understanding how the fill factor was influenced by device physical mechanisms is meaningful. In this study, we reported a method to improve the device fill factor using a thin cesium iodide layer modification in tin-based perovskite cells. With the thin passivation layer, a high-quality perovskite film with larger crystals and lower charge carrier densities was obtained. As a result, the series resistance of devices was decreased; the shunt resistance of devices was increased; and the non-radiative recombination of devices was suppressed. Consequently, the fill factor, and the device efficiency and stability were greatly enhanced. The champion tin-based perovskite cells showed a fill factor of 63%, an efficiency of 6.1% and excellent stability. Our study reveals that, with a moderate thin layer modification strategy, the long-term stability of tin-based PSCs can be developed. © 2023 by the authors.

Keyword:

cesium iodide fill factor lead-free stability tin-based perovskite

Community:

  • [ 1 ] [He L.]Beijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing, 100101, China
  • [ 2 ] [Cheng J.]Beijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing, 100101, China
  • [ 3 ] [Zhao L.]College of Engineering, Qufu Normal University, Rizhao, 276826, China
  • [ 4 ] [Chen X.]Beijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing, 100101, China
  • [ 5 ] [Chen X.]School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing, 100101, China
  • [ 6 ] [Zou X.]Beijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing, 100101, China
  • [ 7 ] [Zhang C.]Beijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing, 100101, China
  • [ 8 ] [Li J.]Beijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing, 100101, China
  • [ 9 ] [Li J.]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fuzhou, 350002, China

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Source :

Molecules

ISSN: 1420-3049

Year: 2023

Issue: 17

Volume: 28

4 . 2

JCR@2023

4 . 2 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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