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author:

Zhang, Haizhong (Zhang, Haizhong.) [1] | Ju, Xin (Ju, Xin.) [2] | Chi, Dongzhi (Chi, Dongzhi.) [3] | Feng, Linrun (Feng, Linrun.) [4] | Liu, Zhe (Liu, Zhe.) [5] | Yew, Kwangsing (Yew, Kwangsing.) [6] | Zhu, Minmin (Zhu, Minmin.) [7] | Li, Tiaoyang (Li, Tiaoyang.) [8] | Wei, Rongshan (Wei, Rongshan.) [9] | Wang, Shaohao (Wang, Shaohao.) [10] | Sun, Linfeng (Sun, Linfeng.) [11] | Wang, Zhongrui (Wang, Zhongrui.) [12] | Wu, Yanqing (Wu, Yanqing.) [13]

Indexed by:

EI

Abstract:

Taking inspiration from the human eye's information processing capabilities, the artificial optoelectronic neuronic device (AOEND) offers a promising approach to creating a bionic eye that performs real-time, low-power processing by integrating optical sensors, signal processing, and electronic neurons into a single device. Despite significant advancements, the current AOEND still faces challenges in terms of power consumption, flexibility, bio-compatibility, and, most importantly, achieving photo-sensitivity across the same broadband perceivable wavelength range (380nm to 740nm) as the human eye. In this study, we present a commercially ready, dual-gated thin-film-transistor (TFT)-based AOEND. Our device exhibits exceptional photo-response to specific wavelengths by utilizing an organic TIPS-pentacene material as the channel layer and intentionally tailoring its optical bandgap to approximately 1.6eV. Additionally, the device successfully replicates various photon-triggered synaptic characteristics and performs visual sensing, memory processing, and other functions with low power consumption. Our findings present a viable strategy for the development of future integrated sensing-memory-processing flexible devices for optoelectronic artificial retina perception applications. © 2023 Elsevier Ltd

Keyword:

Biocompatibility Bionics Electric power utilization Neurons Phototransistors Signal processing Thin film transistors

Community:

  • [ 1 ] [Zhang, Haizhong]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Ju, Xin]Agency for Science, Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, 138634, Singapore
  • [ 3 ] [Chi, Dongzhi]Agency for Science, Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, 138634, Singapore
  • [ 4 ] [Feng, Linrun]LinkZill Technology Co., Ltd., Zhejiang, Hangzhou; 310000, China
  • [ 5 ] [Liu, Zhe]LinkZill Technology Co., Ltd., Zhejiang, Hangzhou; 310000, China
  • [ 6 ] [Yew, Kwangsing]GlobalFoundries, 60 Woodlands Industrial Park D Street 2, 738406, Singapore
  • [ 7 ] [Zhu, Minmin]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 8 ] [Li, Tiaoyang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 9 ] [Wei, Rongshan]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 10 ] [Wang, Shaohao]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 11 ] [Sun, Linfeng]School of Physics, Beijing Institute of Technology, Beijing; 100081, China
  • [ 12 ] [Wang, Zhongrui]Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong
  • [ 13 ] [Wu, Yanqing]Institute of Microelectronics, Peking University, Beijing; 100871, China

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Source :

Applied Materials Today

Year: 2023

Volume: 33

7 . 2

JCR@2023

7 . 2 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 13

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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