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author:

Huang, X. (Huang, X..) [1] | Guo, H. X. (Guo, H. X..) [2] | Zhu, P. S. (Zhu, P. S..) [3] | Liu, L. (Liu, L..) [4] | Xiao, J. (Xiao, J..) [5] | Tang, D. P. (Tang, D. P..) [6] (Scholars:汤德平) | Lin, C. (Lin, C..) [7] (Scholars:林枞) | Wu, X. (Wu, X..) [8] (Scholars:吴啸) | Zheng, X. H. (Zheng, X. H..) [9] (Scholars:郑兴华)

Indexed by:

ESCI

Abstract:

CaCu3Ti4O12 (CCTO) is a potential dielectric material with giant permittivity, good stability over the wide temperature and frequency range. However, the dielectric responses of CCTO-based ceramics are mainly investigated in the frequency of 10(2)-10(6) Hz, which is far low to clarify the intrinsic dielectric feature. So, microwave dielectric properties have been investigated for the CCTO porous ceramics sintered at low temperature (<= 1000 degrees C). Good microwave dielectric properties of permittivity epsilon = 62.7, quality factor Qf = 3062 GHz and temperature coefficient of the resonant frequency tau(f) = 179 ppm/degrees C are achieved for the CCTO ceramics sintered at 1000 degrees C, the dielectric loss significantly decreases two orders to 0.002 compared to that of CCTO ceramics sintered at critical temperature of 1020 degrees C confirmed by differential scanning calorimetry (DSC). This clue indicates that giant permittivity and high loss is not intrinsic for CCTO ceramics, but derives from composition segregation, liquid phase and defects associated with internal barrier layer capacitor (IBLC). It suggests that CCTO-based ceramics is a promising microwave dielectric materials with high permittivity.

Keyword:

CCTO dielectric mechanism microwave dielectric properties sintering temperature

Community:

  • [ 1 ] [Huang, X.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 2 ] [Guo, H. X.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 3 ] [Zhu, P. S.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 4 ] [Liu, L.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 5 ] [Xiao, J.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 6 ] [Lin, C.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 7 ] [Wu, X.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 8 ] [Zheng, X. H.]Fuzhou Univ, Inst Adv Ceram, Coll Mat Sci & Engn, 2 Xueyuan Rd,Univ Town, Fuzhou 350108, Peoples R China
  • [ 9 ] [Huang, X.]Fujian Univ Technol, Sch Mech & Automot Engn, 3 Xueyuan Rd,Univ Town, Fuzhou 350118, Peoples R China
  • [ 10 ] [Tang, D. P.]Fuzhou Univ, Coll Zijin Min, Xueyuan Rd 2,Univ Town, Fuzhou 350108, Peoples R China

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Source :

JOURNAL OF ADVANCED DIELECTRICS

ISSN: 2010-135X

Year: 2023

Issue: 05

Volume: 13

2 . 1

JCR@2023

2 . 1 0 0

JCR@2023

JCR Journal Grade:3

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 14

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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