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author:

Zhou, P.-K. (Zhou, P.-K..) [1] | Yu, H. (Yu, H..) [2] | Li, Y. (Li, Y..) [3] | Chen, Q. (Chen, Q..) [5] | Chen, X. (Chen, X..) [6]

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Scopus

Abstract:

Covalent organic polymers (COPs) have emerged as a promising class of materials for memory devices due to their unique electronic properties and potential for tunability. This review highlights recent advances in the field of COPs-based thin films for memory applications, with a focus on the synthesis and characterization of COP thin films, their electronic properties, and their performance as memory devices. The potential of COPs-based thin films as flexible memory devices is also discussed. Overall, the recent progress in COPs-based thin films for memory applications suggests that these materials may have a significant impact on the development of next-generation memory technologies. © 2023 Wiley Periodicals LLC.

Keyword:

covalent organic polymers memory device memristors resistive random-access memory thin films

Community:

  • [ 1 ] [Zhou P.-K.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, Fuzhou, China
  • [ 2 ] [Yu H.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, Fuzhou, China
  • [ 3 ] [Li Y.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, Fuzhou, China
  • [ 4 ] [Yu H.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, Fuzhou, China
  • [ 5 ] [Chen Q.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, Fuzhou, China
  • [ 6 ] [Chen X.]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, Fuzhou, China

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Source :

Journal of Polymer Science

ISSN: 2642-4150

Year: 2023

Issue: 8

Volume: 62

Page: 1536-1553

3 . 9

JCR@2023

3 . 9 0 0

JCR@2023

ESI HC Threshold:39

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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