Growth and spectroscopic characterization of Pr:Gd2SrAl2O7 crystal – A potential solid red laser material - Details

author：

Lin, Z. (Lin, Z..) ^[1] | Dong, X. (Dong, X..) ^[2] | Dong, J. (Dong, J..) ^[3] | Yuan, F. (Yuan, F..) ^[4]

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Abstract：

In　this　article,　a　series　of　(PrxGd1-x)2SrAl2O7　(x　=　0.006–0.05)　polycrystalline　compounds　were　synthesized　by　traditional　solid-state　reaction　to　find　out　the　optimum　Pr　ion＇s　concentration　of　the　best　fluorescence　performance　for　single　crystal　growth.　Then,　a　transparent　0.95　at.%　Pr:Gd2SrAl2O7　(Pr:GSAO)　single　crystal　was　successfully　grown　by　the　Czochralski　method.　Spectroscopic　properties　and　Judd-Ofelt　theory　analysis　of　this　crystal　were　investigated　in　detail.　The　Pr:GSAO　crystal　has　a　strong　and　broad　absorption　band　at　about　453　nm,　with　the　absorption　cross　section　of　4.53　×　10−20　cm2　and　the　full　width　at　half　maximum　(FWHM)　of　5.10　nm　(π-polarization),　which　matches　well　with　the　emission　bands　of　InGaN　laser　diodes.　There　are　a　large　number　of　emission　peaks　in　the　visible　region,　the　strongest　emission　peak　is　located　at　about　662　nm　with　the　cross　section　of　1.20　×　10-18　cm2　(π).　The　fluorescence　lifetime　of　the　3P0　energy　level　of　Pr:GSAO　crystal　is　5.55　μs.　These　results　reveal　that　the　Pr:GSAO　crystal　is　a　potential　candidate　for　red　lasers.　©　2023　Elsevier　B.V.

Keyword：

A1. Characterization A2. Czochralski method A2. Single crystal growth B1. Inorganic compounds B1. Oxides B3. Solid state laser

Community：

[ 1 ] [Lin Z.]College of Chemistry, Fuzhou University, Fuzhou, 350108, China
[ 2 ] [Lin Z.]Fujian College, University of Chinese Academy of Sciences, Fuzhou, 350002, China
[ 3 ] [Dong X.]College of Chemistry, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Dong X.]Fujian College, University of Chinese Academy of Sciences, Fuzhou, 350002, China
[ 5 ] [Dong J.]College of Chemistry, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Dong J.]Fujian College, University of Chinese Academy of Sciences, Fuzhou, 350002, China
[ 7 ] [Yuan F.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
[ 8 ] [Lin Z.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
[ 9 ] [Lin Z.]Fujian College, University of Chinese Academy of Sciences, Fuzhou, 350002, China

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Source ：

Journal of Crystal Growth

ISSN： 0022-0248

Year： 2023

Volume： 617

1 . 7

JCR@2023

1 . 7 0 0

JCR@2023

ESI HC Threshold：39

JCR Journal Grade：3

CAS Journal Grade：3

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 5

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