Large-size　Pb(Mg1/3Nb2/3)O-3-PbTiO3　(PMN-PT)　based　ferroelectric　single　crystals　have　been　grown　successfully　by　the　vertical　Bridgman　method　for　application　in　the　field　of　high-end　piezoelectric　devices.　The　piezoelectric　and　dielectric　performance　uniformity　of　PMN-PT　based　ferroelectric　crystals　is　a　critical　application　requirement.　Recently,　alternating　current　poling　(ACP)　has　attracted　much　attention　due　to　its　low　cost　and　high　efficiency　in　improving　the　piezoelectric　properties　of　PMN-PT　based　crystals.　Here,　we　report　the　comparison　of　the　performance　fluctuation　of　direct　current　poling　(DCP)　and　ACP　Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3　(PIN-PMN-PT)　ferroelectric　single　crystals　grown　in　the　[110]　direction　using　the　vertical　Bridgman　method.　The　fluctuation　of　piezoelectric　coefficient　d(33),　dielectric　constant　e(33)(T)/e(0),　and　dielectric　loss　tand　was　presented.　We　found　that　the　average　d(33)　and　e(33)(T)/e(0)　of　ACP　samples　are　1290　and　1500　pC/N　and　3890　and　4290　for　two　different　wafers,　which　were　18%　and　23%,　21%　and　26%　higher　than　DCP　samples.　The　tand　of　ACP　samples　was　much　lower　than　that　of　DCP　samples.　The　DCP　and　ACP　samples　exhibited　the　close　data　of　the　fluctuation　ratios　of　d(33)　and　e(33)(T)/e(0).　The　fluctuation　ratios　of　d(33)　and　e(33)(T)/e(0)　for　DCP　and　ACP　samples　are　all　less　than　10%.　This　work　offers　a　reference　for　practical　ACP　technique　applications.