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author:

Zhu, Bo (Zhu, Bo.) [1] | Luo, Yi (Luo, Yi.) [2] | Wu, Haiyi (Wu, Haiyi.) [3] | Sun, Du (Sun, Du.) [4] | Liu, Luo (Liu, Luo.) [5] | Shu, Shengcheng (Shu, Shengcheng.) [6] | Luo, Zhong-Zhen (Luo, Zhong-Zhen.) [7] (Scholars:罗中箴) | Zhang, Qiang (Zhang, Qiang.) [8] | Suwardi, Ady (Suwardi, Ady.) [9] | Zheng, Yun (Zheng, Yun.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Amongst thermoelectrics, Bi2Te3 is special owing to its peak performance near room temperature, which enables it to be used for both energy harvesting and cooling. Despite extensive studies on this compound, Bi2Te3-based bulk materials are usually prepared by field-assisted sintering and hot pressing. This necessitates sophisticated equipment and tedious compositional control, both of which are undesirable for large scale applications. In this work, a low-temperature liquid phase sintering (LPS) method was employed to prepare p-type Bi0.5Sb1.5Te3/SiC composites with enhanced thermoelectric properties. In addition, a nearly two-fold increase in the power factor was observed post heat treatment at 350 degrees C. This can be ascribed to carrier concentration modulation due to porosity induced by heat treatment. Further addition of 0.6 vol% SiC results in a low lattice thermal conductivity of 0.33 W m(-1) K-1, which can be ascribed to phonon scattering due to various defects induced by the SiC inclusion. Ultimately, a figure of merit ZT of 1.05 at 340 K was achieved for Bi0.5Sb1.5Te3/0.6 vol% SiC, 20% higher than that of the pristine sample. Moreover, an average ZT of 0.87 at 300-500 K was attained, comparable to state-of-the-art values via high-temperature processing. This work showcases the promising application of the low-temperature LPS technique for energy-efficient processing of thermoelectrics.

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Community:

  • [ 1 ] [Zhu, Bo]Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
  • [ 2 ] [Luo, Yi]Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
  • [ 3 ] [Wu, Haiyi]Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
  • [ 4 ] [Sun, Du]Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
  • [ 5 ] [Liu, Luo]Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
  • [ 6 ] [Zheng, Yun]Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
  • [ 7 ] [Zhu, Bo]Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Minist Educ, Taiyuan 030024, Peoples R China
  • [ 8 ] [Zhang, Qiang]Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Minist Educ, Taiyuan 030024, Peoples R China
  • [ 9 ] [Shu, Shengcheng]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Zhejiang Key Lab Marine Mat & Protect Technol, Ningbo 315201, Peoples R China
  • [ 10 ] [Luo, Zhong-Zhen]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Peoples R China
  • [ 11 ] [Zhu, Bo]Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
  • [ 12 ] [Suwardi, Ady]ASTAR, Inst Mat Res & Engn, Singapore City 138634, Singapore
  • [ 13 ] [Suwardi, Ady]Natl Univ Singapore, Dept Mat Sci & Engn, Singapore City 117575, Singapore

Reprint 's Address:

  • [Zheng, Yun]Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China;;[Zhang, Qiang]Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Minist Educ, Taiyuan 030024, Peoples R China;;[Suwardi, Ady]ASTAR, Inst Mat Res & Engn, Singapore City 138634, Singapore;;[Suwardi, Ady]Natl Univ Singapore, Dept Mat Sci & Engn, Singapore City 117575, Singapore;;

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Source :

JOURNAL OF MATERIALS CHEMISTRY A

ISSN: 2050-7488

Year: 2023

Issue: 16

Volume: 11

Page: 8912-8921

1 0 . 8

JCR@2023

1 0 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 9

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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