Growth and spectral characteristic of Nd:CaMgSi2O6 crystal - Details

author：

Dong, Jianyue (Dong, Jianyue.) ^[1] | Lin, Ziwei (Lin, Ziwei.) ^[2] | Dong, Xiaoqian (Dong, Xiaoqian.) ^[3] | Huang, Yisheng (Huang, Yisheng.) ^[4] | Lin, Zhoubin (Lin, Zhoubin.) ^[5]

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Abstract：

A　0.56　at.%　Nd:CaMgSi2O6　single　crystal　was　successfully　grown　by　the　Czochralski　method,　the　crystal＇s　polarized　absorption　spectra,　fluorescence　spectra　and　lifetime　were　investigated　in　details.　Based　on　J-O　theory,　the　line　strengths,　spontaneous　transition　rates,　fluorescence　branching　ratios,　and　radiative　lifetime　were　obtained.　The　strong　and　broad　absorption　band　at　around　803　nm　matches　well　with　the　emission　wavelength　of　AlGaAs　laser　diodes.　There　are　three　strong　emission　peaks　located　at　1055,　1081,　and　1115　nm　in　fluorescence　spectra.　A　laser　output　power　of　0.262　W　at　1055.25　nm　with　the　slope　efficiency　of　16　%　was　obtained.　The　intense　multi-wavelength　emissions　from　the　Nd:　CaMgSi2O6　crystal　indicate　that　such　a　crystal　could　be　used　advantageously　for　a　multi-wavelength　laser　operation.　©　2023　Elsevier　B.V.

Keyword：

Aluminum alloys Aluminum gallium arsenide Crystal growth from melt Fluorescence Gallium alloys Indium alloys Magnesium alloys Semiconducting indium gallium arsenide Semiconductor alloys Silicates Single crystals Solid state lasers

Community：

[ 1 ] [Dong, Jianyue]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
[ 2 ] [Dong, Jianyue]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 3 ] [Lin, Ziwei]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
[ 4 ] [Lin, Ziwei]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 5 ] [Dong, Xiaoqian]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
[ 6 ] [Dong, Xiaoqian]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 7 ] [Huang, Yisheng]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 8 ] [Huang, Yisheng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
[ 9 ] [Lin, Zhoubin]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 10 ] [Lin, Zhoubin]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

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Source ：

Journal of Crystal Growth

ISSN： 0022-0248

Year： 2023

Volume： 607

1 . 7

JCR@2023

1 . 7 0 0

JCR@2023

ESI HC Threshold：39

JCR Journal Grade：3

CAS Journal Grade：3

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WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 2

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