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author:

Xiao, Y. (Xiao, Y..) [1] | Fu, H. (Fu, H..) [2] | Li, Z. (Li, Z..) [3] | Zheng, Y. (Zheng, Y..) [4] | Deng, P. (Deng, P..) [5] | Lei, Y. (Lei, Y..) [6] | Yu, Y. (Yu, Y..) [7]

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ESCI Scopus

Abstract:

The 6H-[1,2,5]thiadiazolo[3,4-e]thieno[3,2-b]indole-flanked para-azaquinodimethane (p-AQM)-based polymer semiconductors PQ-1 and PQ-2 are rationally designed through a π-extended aromatic-quinoidal design strategy. They are synthesized by the direct arylation polycondensation (DArP) method. Their physicochemical properties are investigated. Both polymers show high number-average molecular weights of over 120 kDa. PQ-1 exhibits a narrower band gap compared to its thiophene-flanked p-AQM polymer counterpart. PQ-2, with more aromatic thiophene units in the conjugated main chains, displays a broader band gap compared to PQ-1. Both PQ-1 and PQ-2 possess high-lying highest occupied molecular orbital energy levels (about −5.0 eV). They exhibit typical p-type semiconductor characteristics according to the results of characterization of organic field-effect transistors. This work presents an alternative π-extended aromatic-quinoidal design strategy and a convenient DArP method to build new p-AQM polymer semiconductors. © 2023 RSC.

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Community:

  • [ 1 ] [Xiao, Y.]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 2 ] [Fu, H.]School of Physical Science and Technology, Chongqing Key Lab of Micro&Nano Structure Optoelectronics, Southwest University, Chongqing, 400715, China
  • [ 3 ] [Li, Z.]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 4 ] [Zheng, Y.]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 5 ] [Deng, P.]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 6 ] [Lei, Y.]School of Physical Science and Technology, Chongqing Key Lab of Micro&Nano Structure Optoelectronics, Southwest University, Chongqing, 400715, China
  • [ 7 ] [Yu, Y.]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China

Reprint 's Address:

  • 于岩

    [Deng, P.]Key Laboratory of Advanced Materials Technologies, Fujian, China;;[Lei, Y.]School of Physical Science and Technology, China;;[Yu, Y.]Key Laboratory of Advanced Materials Technologies, Fujian, China

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Source :

Materials Advances

ISSN: 2633-5409

Year: 2023

Issue: 8

Volume: 4

Page: 1927-1934

5 . 2

JCR@2023

5 . 2 0 0

JCR@2023

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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