• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Tian, T. (Tian, T..) [1] | Chen, F. (Chen, F..) [2] | Wen, Z. (Wen, Z..) [3] | Wang, Z. (Wang, Z..) [4] | Hu, Y. (Hu, Y..) [5] | Shu, S. (Shu, S..) [6]

Indexed by:

Scopus

Abstract:

AgNbO3 antiferroelectric (AFE) ceramics have attracted much attention because of their high-energy storage performance and environment-friendly characteristics. In this paper, Sb2O5-doped AgNbO3 ceramics are prepared by the traditional solid-state reaction method, and the effects of phase structure, microstructure, dielectric, and ferroelectric properties are systematically investigated. Lattice shrinkage and obvious grain size change are caused by the introduction of Sb5+ ions. The dielectric constant increases significantly with the introduction of Sb5+ (εr from 210 to 550 at room temperature), and the phase transition temperatures of M1–M2 and M2–M3 shift to a lower temperature as the Sb-doping level increases. High relaxor degree γ = 1.97 of M1–M2 peak is achieved in the AgNb0.98Sb0.02O3 ceramics, showing typical relaxor antiferroelectric characteristics. Simultaneously, the relaxor characteristics lead to lower remanent polarization values, a finer P–E hysteresis loop, and an improved AFE phase in AgNb0.98Sb0.02O3 ceramics. Compared to pure AgNbO3, AgNb0.98Sb0.02O3 ceramics have a higher recoverable energy density (Jrec= 1.70 J/cm3) and higher energy efficiency (η = 30.05%). © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Community:

  • [ 1 ] [Tian, T.]School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China
  • [ 2 ] [Chen, F.]School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China
  • [ 3 ] [Wen, Z.]School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China
  • [ 4 ] [Wang, Z.]School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China
  • [ 5 ] [Hu, Y.]Hubei Key Laboratory of Ferro- and Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China
  • [ 6 ] [Shu, S.]College of Electrical Engineering and Automation, Fuzhou University, Fuzhou, 350108, China

Reprint 's Address:

  • [Wang, Z.]School of Materials Science and Engineering, China;;[Shu, S.]College of Electrical Engineering and Automation, China

Show more details

Related Keywords:

Related Article:

Source :

Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year: 2023

Issue: 4

Volume: 34

2 . 8

JCR@2023

2 . 8 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

Affiliated Colleges:

Online/Total:176/10275487
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1