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author:

Fang, G. (Fang, G..) [1] | Wang, Y. (Wang, Y..) [2] | You, Z. (You, Z..) [3] | Li, J. (Li, J..) [4] | Zhu, Z. (Zhu, Z..) [5] | Lakshminarayana, G. (Lakshminarayana, G..) [6] | Sun, Y. (Sun, Y..) [7] | Tu, C. (Tu, C..) [8]

Indexed by:

Scopus

Abstract:

The Dy3+:SGB single crystal has been successfully prepared for the first time via the Czochralski technique, of which the optical features were investigated in detail. Based on measured polarized absorption spectra, various spectral parameters were determined via Judd-Ofelt theory. The peak absorption cross-sections at 450 nm for the 6H15/2 → 4I15/2 transition of Dy3+ ions, are 0.66 × 10−21 cm2 for π-polarization and 0.59 × 10−21 cm2 for σ-polarization respectively. The emission cross-sections at 576 nm are 1.91 × 10−21 cm2 and 1.67 × 10−21 cm2 for π and σ polarizations accordingly. Radiative and fluorescence decay times of Dy3+: 4F9/2 level were measured to be 1.607 ms and 1.037 ms, respectively, and the quantum efficiency is 64.5%. All experimental results tell that Dy:SGB could be a potential candidate for direct LD-pumped yellow lasers. © 2022 Elsevier B.V.

Keyword:

Dy3+ Judd-Ofelt analysis Optical features Sr3Gd(BO3)3 crystal Visible emission Yellow laser

Community:

  • [ 1 ] [Fang, G.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
  • [ 2 ] [Fang, G.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 3 ] [Fang, G.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 4 ] [Wang, Y.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
  • [ 5 ] [Wang, Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 6 ] [You, Z.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
  • [ 7 ] [You, Z.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 8 ] [Li, J.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
  • [ 9 ] [Li, J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 10 ] [Zhu, Z.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
  • [ 11 ] [Zhu, Z.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 12 ] [Lakshminarayana, G.]Intelligent Construction Automation Center, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, 41566, South Korea
  • [ 13 ] [Sun, Y.]Faculty of Materials Metallurgy and Chemical, Jiangxi University of Science and Technology, Jiangxi, Ganzhou, 341000, China
  • [ 14 ] [Tu, C.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
  • [ 15 ] [Tu, C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China

Reprint 's Address:

  • [Tu, C.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, China

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Source :

Journal of Luminescence

ISSN: 0022-2313

Year: 2022

Volume: 251

3 . 6

JCR@2022

3 . 3 0 0

JCR@2023

ESI HC Threshold:55

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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