Although　much　effort　has　been　made　to　explore　quantum　anomalous　Hall　effect　(QAHE)　in　both　theory　and　experiment,　the　QAHE　systems　with　tunable　Chern　numbers　are　yet　limited.　Here,　we　theoretically　propose　that　NiAsO$_3$　and　PdSbO$_3$,　monolayer　transitional　metal　oxides,　can　realize　QAHE　with　tunable　Chern　numbers　via　manipulating　their　magnetization　orientations.　When　the　magnetization　lies　in　the　\textit{x-y}　plane　and　all　mirror　symmetries　are　broken,　the　low-Chern-number　(i.e.,　$\mathcal{C}=\pm1$)　phase　emerges.　When　the　magnetization　exhibits　non-zero　\textit{z}-direction　component,　the　system　enters　the　high-Chern-number　(i.e.,　$\mathcal{C}=\pm3$)　phase,　even　in　the　presence　of　canted　magnetization.　The　global　band　gap　can　approach　the　room-temperature　energy　scale　in　monolayer　PdSbO$_3$　(23.4　meV),　when　the　magnetization　is　aligned　to　\textit{z}-direction.　By　using　Wannier-based　tight-binding　model,　we　establish　the　phase　diagram　of　magnetization　induced　topological　phase　transition.　Our　work　provides　a　high-temperature　QAHE　system　with　tunable　Chern　number　for　the　practical　electronic　application.