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author:

Wang, H. (Wang, H..) [1] | Wang, L. (Wang, L..) [2] | Sun, J. (Sun, J..) [3] | Guo, T.-L. (Guo, T.-L..) [4] | Chen, E.-G. (Chen, E.-G..) [5] | Zhou, X.-T. (Zhou, X.-T..) [6] | Zhang, Y.-A. (Zhang, Y.-A..) [7] | Yan, Q. (Yan, Q..) [8]

Indexed by:

Scopus

Abstract:

One of the bottlenecks for today's micro-light-emitting-diodes (micro-LEDs) is the low light extraction efficiency. How to effectively boost this efficiency is especially important for micro-LEDs because their surface-to-volume ratio is much larger than normal LEDs. The trapezoidal chip structure, surface grating, and surface coarsening are simulated in this paper, with the aim to obtain their contributions to enhance the light extraction efficiency. Through the simulation, we have found that all of the three methods can increase the light extraction, but with different extents. When the trapezoidal angle of the mesa is 12°, the extraction efficiency reaches its maximum (by this method) of 64.5%. If the surface grating on n-GaN (the light output surface) has a period of 300 nm, a height of 147 nm and width of 243 nm, the light extraction efficiency can be as high as 72%, which is much higher than that of the micro-LED without any grating. For the random roughening of n-GaN, a maximum value of 56% can be obtained if the roughness extent is optimized. Our results are of reference value for scientists and engineers working in micro-LEDs and can serve as guidelines for GaN based high efficiency micro-LED design for future displays. © 2022 Elsevier B.V.

Keyword:

Grating; Light extraction efficiency; Micro-LEDs; Simulation; Surface roughness; Trapezoidal chip

Community:

  • [ 1 ] [Wang, H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Wang, L.]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Sun, J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 4 ] [Guo, T.-L.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 5 ] [Chen, E.-G.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 6 ] [Zhou, X.-T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 7 ] [Zhang, Y.-A.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 8 ] [Yan, Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China

Reprint 's Address:

  • [Sun, J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, China

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Source :

Displays

ISSN: 0141-9382

Year: 2022

Volume: 73

4 . 3

JCR@2022

3 . 7 0 0

JCR@2023

ESI HC Threshold:61

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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