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author:

Chen, G. (Chen, G..) [1] | Peng, G. (Peng, G..) [2] | Yu, X. (Yu, X..) [3] | Yu, W. (Yu, W..) [4] | Hao, Y. (Hao, Y..) [5] | Dai, Y. (Dai, Y..) [6] | Chen, H. (Chen, H..) [7] | Guo, T. (Guo, T..) [8]

Indexed by:

Scopus

Abstract:

Multifunctional neuromorphic devices, integrating the acquisition, computation, and processing of information, have exceptional advantages to simulate biological behaviors and become one of the foundations of future neuromorphic computing. However, the realization of sensor-memory-calculation in a single device remains a great challenge. Herein, memory-synaptic hybrid optoelectronic transistors were developed with hydrolyzed silica-coated lead-free double perovskite Cs2AgBiBr6 and organic semiconductors, which exhibited sensor-memory-calculation behavior. This work offers a novel strategy for constructing multifunctional neuromorphic devices, which will further inspire the development of floating-gate device in future neuromorphic computing. © 1963-2012 IEEE.

Keyword:

Multifunctional; organic thin-film transistors; photo-memory; synaptic plasticity modulation

Community:

  • [ 1 ] [Chen, G.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 2 ] [Chen, G.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 3 ] [Peng, G.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 4 ] [Peng, G.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 5 ] [Yu, X.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 6 ] [Yu, X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 7 ] [Yu, W.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 8 ] [Yu, W.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 9 ] [Hao, Y.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 10 ] [Hao, Y.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 11 ] [Dai, Y.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 12 ] [Dai, Y.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 13 ] [Chen, H.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 14 ] [Chen, H.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 15 ] [Guo, T.]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350108, China
  • [ 16 ] [Guo, T.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

Reprint 's Address:

  • [Chen, G.]Institute of Optoelectronic Display, China

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2022

Issue: 7

Volume: 69

Page: 3997-4001

3 . 1

JCR@2022

2 . 9 0 0

JCR@2023

ESI HC Threshold:66

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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