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author:

Gao, C. (Gao, C..) [1] | Yu, R. (Yu, R..) [2] | Li, E. (Li, E..) [3] | Zhang, C. (Zhang, C..) [4] | Zou, Y. (Zou, Y..) [5] | Chen, H. (Chen, H..) [6] | Lin, Z. (Lin, Z..) [7] | Guo, T. (Guo, T..) [8]

Indexed by:

Scopus

Abstract:

Neuromorphic computing with brain-like functions has become one of the important strategies for the von Neumann bottleneck. However, current artificial neuromorphic systems are mainly based on volatile or non-volatile synaptic devices, which limit the flexibility and computational efficiency of neuromorphic computing systems. Here, we report an adaptive immunomorphic hardware based on the heterostructure of MXene-TiO2 complexes and organic semiconductors. The hardware has photon-triggered synaptic plasticity for accurate recognition and electrically triggered non-volatile retention for effective preservation of weight values. As a result, the retraining time and power consumption of the hardware can be reduced by 95% and 96%, respectively. Moreover, the array system expanded to 5 × 5 can extract special information from complex signals within 0.2 s, enabling feature information recognition. This work, therefore, provides a new strategy for improving the efficiency of artificial neuromorphic computation and has significant application prospects in intelligent sensing systems and edge computing. © 2022 The Authors

Keyword:

artificial neuromorphic computation; feature information recognition; first-principles calculations; heterostructures photoelectric transistors; in-sensor memory; MXene-TiO2 complexes; non-volatile memory; photonic synaptic transistors

Community:

  • [ 1 ] [Gao, C.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Gao, C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 3 ] [Yu, R.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Yu, R.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 5 ] [Li, E.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 6 ] [Li, E.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 7 ] [Zhang, C.]School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
  • [ 8 ] [Zou, Y.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 9 ] [Zou, Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 10 ] [Chen, H.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 11 ] [Chen, H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 12 ] [Lin, Z.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 13 ] [Lin, Z.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362200, China
  • [ 14 ] [Guo, T.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 15 ] [Guo, T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

Reprint 's Address:

  • [Chen, H.]Institute of Optoelectronic Display, China

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Source :

Cell Reports Physical Science

ISSN: 2666-3864

Year: 2022

Issue: 6

Volume: 3

8 . 9

JCR@2022

7 . 9 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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