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author:

Huang, Bohr-Ran (Huang, Bohr-Ran.) [1] | Chen, Yu-Jyun (Chen, Yu-Jyun.) [2] | Hung, Shang-Chao (Hung, Shang-Chao.) [3]

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EI

Abstract:

Titrating various amount of graphene nanoribbons on titanium dioxide nanotubes (Gr/TNTs) and nano-bugles (Gr/TNBs) with different apertures to form composite nanostructures, and using them as gas sensing layers, have been achieved successfully and confirmed by FESEM observation, Raman spectra comparisons, XRD and FTIR measurements. The Gr/TNBs sensors show higher hydrogen gas response than corresponding Gr/TNTs sensors over the 100–2000 ppm range; this suggests that altering sensing morphology can improve gas sensing capability. A composition effect is found on Gr/TNBs sensors, and this effect is more pronounced with higher graphene concentration. On the other hand, heavier graphene content on Gr/TNTs sensors does not seem to affect their sensing capability much. Also, measuring hydrogen gas sensitivity under fixed gas concentration for 40 V Gr/TNB sensors shows a strong linear correlation between graphene concentration and responsivity. Yet measurement on 40 V Gr/TNTs sensors, at relatively low gas concentration of 100 ppm, shows that increase in graphene content hardly affects their responsivity. Gr/TNTs sensors fabricated with both smaller and larger tubular apertures produce this same result, too. Lastly, gas diffusion interactions between two-dimensional layered graphene structure and various geometries of TiO2 are fully discussed. © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Chemical detection Fourier transform infrared spectroscopy Gas detectors Gases Graphene Hydrogen Nanoribbons Nanotubes Titanium dioxide

Community:

  • [ 1 ] [Huang, Bohr-Ran]Graduate Institute of Electro-Optical Engineering & Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei; 106, Taiwan
  • [ 2 ] [Chen, Yu-Jyun]Graduate Institute of Electro-Optical Engineering & Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei; 106, Taiwan
  • [ 3 ] [Hung, Shang-Chao]Fuzhou Polytechnic, Fuzhou University City, Fujian, Fuzhou; 350108, China
  • [ 4 ] [Hung, Shang-Chao]Intelligent Technology Research Centre, Fujian, Fuzhou; 350108, China

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Source :

Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year: 2022

Issue: 9

Volume: 33

Page: 6082-6094

2 . 8

JCR@2022

2 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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