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author:

Xiang, Junxiang (Xiang, Junxiang.) [1] | Zhang, Tingshi (Zhang, Tingshi.) [2] | Cao, Ruodan (Cao, Ruodan.) [3] | Lin, Mingxiong (Lin, Mingxiong.) [4] | Yang, Bixia (Yang, Bixia.) [5] | Wen, Yonglin (Wen, Yonglin.) [6] | Zhuang, Zanyong (Zhuang, Zanyong.) [7] | Yu, Yan (Yu, Yan.) [8]

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EI

Abstract:

In designing highly efficient CO2 reduction reaction (CRR) photocatalysts with excellent selectivity and efficiency, a key limitation is the poor understanding on the mechanism response of the active sites of catalysts to CRR selectivity and activity. Herein, it is revealed how the concentration of point defect affects the CRR selectivity and activity of catalysts. Quasi-2D NiO nanosheets (NSs) that are composed of NiO nanoparticles (NPs), and finely tuned the oxygen vacancies (OVs) concentration of the NSs by regulating the grain size (≈5–25 nm) of NPs are created. The NiO with moderate OVs concentration has the highest photocatalytic CRR efficiency and selectivity (V CO = 17.2 μmol h−1, 98.3%), outperforming other prepared NiO catalysts and reported Ni-based photocatalysts. Density functional theory calculation associated with the CO2 temperature-programmed desorption confirms that the moderate OVs concentration enables strong CO2 binding to promote CO2 adsorption and activation and allows efficient charge transfer. In contrast, excessive OVs reduce the CO2 binding affinity and restrain charge mobility, both detrimental to the CRR performance. © 2021 Wiley-VCH GmbH

Keyword:

Binding energy Carbon dioxide Catalyst activity Catalyst selectivity Charge transfer Defect density Defect engineering Density functional theory Efficiency Nanosheets Nickel oxide Oxygen vacancies Temperature programmed desorption

Community:

  • [ 1 ] [Xiang, Junxiang]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 2 ] [Xiang, Junxiang]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 3 ] [Zhang, Tingshi]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 4 ] [Zhang, Tingshi]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 5 ] [Cao, Ruodan]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 6 ] [Cao, Ruodan]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 7 ] [Lin, Mingxiong]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 8 ] [Lin, Mingxiong]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 9 ] [Yang, Bixia]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 10 ] [Yang, Bixia]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 11 ] [Wen, Yonglin]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 12 ] [Wen, Yonglin]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 13 ] [Zhuang, Zanyong]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 14 ] [Zhuang, Zanyong]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 15 ] [Yu, Yan]College of Materials Science and Engineering, Fuzhou University, New Campus, Fujian; 350108, China
  • [ 16 ] [Yu, Yan]Key Laboratory of Advanced Materials Technologies, Fuzhou University, New Campus, Fujian; 350108, China

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Source :

Solar RRL

Year: 2021

Issue: 12

Volume: 5

9 . 1 7 3

JCR@2021

6 . 0 0 0

JCR@2023

ESI HC Threshold:142

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 19

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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