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author:

Li, Enlong (Li, Enlong.) [1] | He, Weixin (He, Weixin.) [2] | Yu, Rengjian (Yu, Rengjian.) [3] | He, Lihua (He, Lihua.) [4] | Wu, Xiaomin (Wu, Xiaomin.) [5] | Chen, Qizhen (Chen, Qizhen.) [6] | Liu, Yuan (Liu, Yuan.) [7] | Chen, Huipeng (Chen, Huipeng.) [8] | Guo, Tailiang (Guo, Tailiang.) [9]

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EI

Abstract:

Enormous synaptic devices are required to build a parallel, precise, and efficient neural computing system. To further improve the energy efficiency of neuromorphic computing, a single high-density synaptic (HDS) device with multiple nonvolatile synaptic states is suggested to reduce the number of synaptic devices in the neural network, although such a powerful synaptic device is rarely demonstrated. Here, a photoisomerism material, namely, diarylethene, whose energy level varies with the wavelength of illumination is first introduced to construct a powerful HDS device. The multiple synaptic states of the HDS device are intrinsically converted under UV-vis regulation and remain nonvolatile after the removal of illumination. More importantly, the conversion is reconfigurable and reversible under different light conditions, and the synaptic characteristics are comprehensively mimicked in each state. Finally, compared with a two-layer multilayer perceptron (MLP) architecture based on static synaptic devices, the HDS device-based architecture reduces the device number by 16 times to achieve a minimalist neural computing structure. The invention of the HDS device opens up a revolutionary paradigm for the establishment of a brain-like network. © 2021 American Chemical Society.

Keyword:

Energy efficiency Green computing Multilayer neural networks Network architecture

Community:

  • [ 1 ] [Li, Enlong]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Li, Enlong]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 3 ] [He, Weixin]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 4 ] [Yu, Rengjian]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [He, Lihua]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Wu, Xiaomin]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 7 ] [Chen, Qizhen]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 8 ] [Liu, Yuan]State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha; 410082, China
  • [ 9 ] [Chen, Huipeng]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 10 ] [Chen, Huipeng]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 11 ] [Guo, Tailiang]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 12 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2021

Issue: 24

Volume: 13

Page: 28564-28573

1 0 . 3 8 3

JCR@2021

8 . 5 0 0

JCR@2023

ESI HC Threshold:142

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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