The　discovery　of　intrinsic　piezoelectricity　in　two-dimensional　(2D)　nanomaterials　(NDs)　have　increasingly　attracted　extensive　interests　for　their　potential　applications　in　next　generation　piezoelectric　devices.　Among　a　wide　range　of　2D　NDs,　monolayer　group　IV　monochalcogenides　with　black　phosphorus　like　structures　have　been　revealed　to　have　giant　piezoelectricity.　In　this　letter,　the　piezoelectricity　of　puckered　group　IV　monochalcogenides　monolayer　NDs,　GeTe,　SnTe,　and　SiTe,　is　first　calculated　by　using　the　density　functional　first-principles　theory.　The　lattice　structures,　band　structures,　and　elastic　properties　of　these　puckered　monolayer　NDs　(GeTe,　SnTe,　and　SiTe)　are　evaluated　based　on　the　PBE　functional.　＂Berry-phase＂　polarization　theory　and　density　functional　perturbation　theory　(DFPT)　are　respectively　used　for　calculating　the　piezoelectric　coefficients.　It　is　found　that　all　these　puckered　monolayer　NDs　(GeTe,　SnTe,　and　SiTe)　exhibit　highly　strong　piezoelectric　properties.　The　calculated　superior　piezoelectricity　makes　these　puckered　monolayer　NDs　promising　applications　in　the　nanoscale　flexible　electronic　and　energy　transfer　devices.