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author:

Zha, Songqing (Zha, Songqing.) [1] | Chen, Yujin (Chen, Yujin.) [2] | Li, Bingxuan (Li, Bingxuan.) [3] | Lin, Yanfu (Lin, Yanfu.) [4] | Liao, Wenbin (Liao, Wenbin.) [5] | Zou, Yuqi (Zou, Yuqi.) [6] | Huang, Chenghui (Huang, Chenghui.) [7] | Lin, Zhanglang (Lin, Zhanglang.) [8] | Zhang, Ge (Zhang, Ge.) [9]

Indexed by:

EI SCIE CSCD

Abstract:

End-pumped by a 976 nm diode laser, a high-repetition-rate Er:Yb:YAl3(BO3)(4) microchip laser passively Q-switched by a Co2+:MgAl2O4 crystal is reported. At a quasi-continuous-wave pump power of 20 W, a 1553 nm passively Q-switched laser with the repetition rate of 544 kHz, pulse duration of 8.3 ns, and pulse energy of 3.9 mu J was obtained. To the best of our knowledge, the 544 kHz is the highest reported value for the 1.5 mu m passively Q-switched pulse laser. In the continuous-wave pumping experiment, the maximum repetition rate of 144 kHz with the pulse duration of 8.0 ns and pulse energy of 1.7 mu J was obtained at the incident pump power of 6.3 W.

Keyword:

1.5 mu m microchip laser Er:Yb:YAl3(BO3)(4) crystal high-repetition-rate laser pulse passive Q-switching

Community:

  • [ 1 ] [Zha, Songqing]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 2 ] [Chen, Yujin]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 3 ] [Li, Bingxuan]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 4 ] [Lin, Yanfu]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 5 ] [Liao, Wenbin]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 6 ] [Huang, Chenghui]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 7 ] [Lin, Zhanglang]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 8 ] [Zhang, Ge]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
  • [ 9 ] [Zha, Songqing]Fuzhou Univ, Fuzhou 350002, Peoples R China
  • [ 10 ] [Li, Bingxuan]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 11 ] [Zhang, Ge]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 12 ] [Zou, Yuqi]Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
  • [ 13 ] [Zhang, Ge]Collaborat Innovat Ctr Optoelect Semicond & Effic, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Chen, Yujin]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China;;[Zhang, Ge]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China;;[Zhang, Ge]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China;;[Zhang, Ge]Collaborat Innovat Ctr Optoelect Semicond & Effic, Fuzhou 350108, Peoples R China

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