The　enhancement　of　electron-and-hole　separation　efficiency　and　facile　generation　of　reactive　oxygen　species　are　significant　factors　for　performance　improvement　of　photocatalysts　in　selective　toluene　photocatalytic　oxidation.　Heterojunction　and　defect　construction　have　been　regarded　as　valid　methods　to　boost　photocatalytic　activity　of　semiconductors.　Herein,　the　CdIn2S4-CdS　composite　with　compact　heterojunctions　and　defect-induced　sulfur　vacancies　was　fabricated　by　a　one-step　hydrothermal　process.　The　sheet-to-sheet　heterojunctions　and　the　abundant　sulfur　vacancies　facilitate　separation　and　migration　of　photoinduced　charge　carriers.　Benefited　from　the　compositional　and　structural　synergy,　the　prepared　CdIn2S4-CdS-140　composite　boosted　photocatalytic　oxidation　activity　for　toluene　conversion　into　benzaldehyde　(remarkable　toluene　conversion　of　80.3%　and　benzaldehyde　selectivity　of　99%　in　6　h)　under　visible　light　irradiation.　It　is　noteworthy　that　the　composite　can　perform　well　when　pure　O-2　was　replaced　with　air.