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author:

胡利勤 (胡利勤.) [1]

Indexed by:

CQVIP PKU CSCD

Abstract:

针对后栅型场致发射显示器(FED)器件介质层制作困难的问题,提出采用刻蚀型介质制作后栅型FED器件。该器件采用普通银浆制作栅极电极,以刻蚀型介质制作介质层,采用感光银浆制作阴极电极,并作为介质刻蚀的掩膜层,CNT为阴极发射材料。器件耐压测试结果表明该介质层耐压性能良好,场发射测试结果表明该器件场发射性能优良。

Keyword:

刻蚀型介质 后栅型 场致发射

Community:

  • [ 1 ] 福州大学场致发射显示技术教育部工程研究中心,福州350002

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Source :

光电子技术

ISSN: 1005-488X

Year: 2010

Issue: 4

Volume: 30

Page: 266-269

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count: -1

30 Days PV: 0

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