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author:

刘坤荣 (刘坤荣.) [1] | 陈为 (陈为.) [2]

Indexed by:

CQVIP

Abstract:

本文提出一种基于电荷保持的MOSFET低损驱动电路,对电路的工作原理、性能特性进行分析,并建立仿真模型。该驱动电路由变压器原边H桥、驱动变压器T及副边次级驱动电路构成;原边H桥由四个MOSFET组成,副边次级驱动电路由两个MOSFET及一双向开关管组成。通过理论计算与仿真分析可知该驱动电路具有驱动效率高、既能驱动单管也能驱动双管、驱动电路的开关部分能实现软开关等优点。

Keyword:

H桥 MOSFET驱动电路 低损驱动电路

Community:

  • [ 1 ] 福州大学电气工程与自动化学院,福建福州310027

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Source :

电气开关

ISSN: 1004-289X

Year: 2018

Issue: 5

Volume: 56

Page: 65-70

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count: -1

30 Days PV: 1

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