Abstract:
本文采用MonteCarlo(MC)方法对S-枪溅射NiCr薄膜过程进行了计算模拟,得到了沉积粒子在基片上的厚度分布,讨论了不同沉积参数对薄膜厚度分布的影响。
Keyword:
Reprint 's Address:
Email:
Source :
真空电子技术
Year: 1998
Issue: 02
Page: 11-14
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 2
Affiliated Colleges: