Factors affecting preparation of high specific surface area silicon carbide - Details

author：

Lin, J.-X. (Lin, J.-X..) ^[1] | Zheng, Y. (Zheng, Y..) ^[2] | Wei, K.-M. (Wei, K.-M..) ^[4]

Indexed by：

Scopus PKU CSCD

Abstract：

A　sol-gel　process　catalyzed　by　oxalic　acid　was　used　for　the　preparation　of　SiC　precursor　from　raw　materials　of　tetraethyl　orthosilicate　(TEOS)　and　sucrose.　The　precursor　thus　obtained　was　homogeneous.　Sintered　with　a　certain　heating　program　(1　350-1　600　°C)　in　an　argon　flow,　the　precursor　was　converted　into　the　high　surface　area　SiC.　The　effect　of　the　amount　of　water,　nickel　nitrate　and　the　molar　ratio　of　C/Si　on　the　surface　area　of　SiC　were　studied.　The　results　show　that　when　the　molar　ratio　of　H2O/TEOS,　C/Si　and　nickel　nitrate/TEOS　is　7.5,　4,　0.005,　respectively,　the　gel　formation　time　is　the　shortest.　The　temperature　for　carbothermal　reduction　could　be　lowered　by　200　°C　when　the　nickel　nitrate　is　added　into　the　precursor.

Keyword：

Carbothermal reduction; High specific surface area; Silicon carbide; Sol-gel

Community：

[ 1 ] [Lin, J.-X.]National Engineering Research Center of Chemical Fertilizer Catalyst, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Zheng, Y.]College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
[ 3 ] [Zheng, Y.]College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
[ 4 ] [Wei, K.-M.]National Engineering Research Center of Chemical Fertilizer Catalyst, Fuzhou University, Fuzhou 350002, China

Reprint 's Address：

[Lin, J.-X.]National Engineering Research Center of Chemical Fertilizer Catalyst, Fuzhou University, Fuzhou 350002, China

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Source ：

Chinese Journal of Inorganic Chemistry

ISSN： 1001-4861

Year： 2006

Issue： 10

Volume： 22

Page： 1778-1782

0 . 5 8 3

JCR@2006

0 . 8 0 0

JCR@2023

JCR Journal Grade：4

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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