A　novel　type　of　the　normal-gate　field　emission　display　(FED)　device　with　the　etched　dielectric　layer　and　carbon　nanotubes　was　fabricated.　First,　the　cathode-gate　structure,　where　the　gate-hole　and　the　cathode　are　connected,　was　made　by　etching　the　dielectric　layer.　Next,　the　device-grade,　carbon　nanotubes　(CNTs)　were　installed　into　the　holes　by　electrophoretic　deposition　to　form　the　field　emission　dat-matrix.　Finally,　the　prototyped　FED　device　was　packed　and　tested.　The　preliminary　results　show　that　the　gate　electrode　is　capable　of　precisely　controlling　the　emission　at　voltages　of　1500　V　and　2000　V.　The　advantages　of　the　newly-developed　techniques　over　the　conventional　ones　include　simple　procedure,　low　cost,　no　technical　limitations　in　misalignment　and　overprinting.