Patterned　ZnO　nanowires　were　successfully　synthesized　on　ITO　electrodes　deposited　on　the　glass　substrate　by　using　a　simple　thermal　evaporation　approach.　The　morphology,　crystallinity　and　optical　properties　of　ZnO　nanowires　were　characterized　by　scanning　electron　microscopy,　X-ray　diffraction,　energy　dispersive　X-ray　and　photoluminescence　spectroscopy.　Their　field　emission　characteristics　were　also　investigated.　SEM　images　showed　that　the　ZnO　nanowires,　with　a　diameter　of　100-200　nm　and　length　up　to　5　μm,　were　highly　uniform　and　well　distributed　on　the　linear　ITO　electrodes.　The　field　emission　measurement　indicated　that　patterned　ZnO　nanowire　arrays　have　a　turn-on　field　of　1.6　V/μm　at　current　density　of　1　μA/cm　2　and　a　threshold　field　of　4.92　V/μm　at　current　density　of　1　mA/cm　2　at　an　emitter-anode　gap　of　700　μm.　The　current　density　rapidly　reached　2.26　mA/cm　2　at　an　applied　field　of　5.38　V/μm.　The　fluctuation　of　emission　current　was　lower　than　5%　for　4.5　h.　The　low　turn-on　field,　high　current　density　and　good　stability　of　patterned　ZnO　nanowire　arrays　indicate　that　it　is　a　promising　candidate　for　field　emission　application.　©　2012　Chinese　Institute　of　Electronics.