Photoelectric properties of Cu 2ZnSnS 4 thin films deposited by thermal evaporation - Details

author：

Wu, X. (Wu, X..) ^[1] | Liu, W. (Liu, W..) ^[2] | Cheng, S. (Cheng, S..) ^[3] | Lai, Y. (Lai, Y..) ^[4] | Jia, H. (Jia, H..) ^[5]

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Scopus CSCD

Abstract：

Sn/Cu/ZnS　precursor　were　deposited　by　evaporation　on　soda　lime　glass　at　room　temperature,　and　then　polycrystalline　thin　films　of　Cu　2ZnSnS　4　(CZTS)　were　produced　by　sulfurizing　the　precursors　in　a　sulfur　atmosphere　at　a　temperature　of　550　°C　for　3　h　Fabricated　CZTS　thin　films　were　characterized　by　X-ray　diffraction,　energy　dispersive　X-ray　spectroscopy,　ultraviolet-visible-near　infrared　spectrophotometry,　the　Hall　effect　system,　and　3D　optical　microscopy.　The　experimental　results　show　that,　when　the　ratios　of　[Cu]/([Zn]　+　[Sn])　and　[Zn]/[Sn]　in　the　CZTS　are　0.83　and　1.15,　the　CZTS　thin　films　possess　an　absorption　coefficient　of　larger　than　4.0　×　10　4　cm　-1　in　the　energy　range　1.5-3.5　eV,　and　a　direct　band　gap　of　about　1.47　eV.　The　carrier　concentration,　resistivity　and　mobility　of　the　CZTS　film　are　6.98　×　10　16　cm　-3,　6.96　Ωcm,　and　12.9　cm　2/(Vs),　respectively　and　the　conduction　type　is　p-type.　Therefore,　the　CZTS　thin　films　are　suitable　for　absorption　layers　of　solar　cells.　©　2012　Chinese　Institute　of　Electronics.

Keyword：

Cu 2ZnSnS 4; electrical properties; evaporation; optical properties

Community：

[ 1 ] [Wu, X.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China
[ 2 ] [Liu, W.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China
[ 3 ] [Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China
[ 4 ] [Lai, Y.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China
[ 5 ] [Jia, H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China

Reprint 's Address：

[Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China

Email：

sycheng@fzu.edu.cn

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Source ：

Journal of Semiconductors

ISSN： 1674-4926

Year： 2012

Issue： 2

Volume： 33

4 . 8 0 0

JCR@2023

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SCOPUS Cited Count： 40

ESI Highly Cited Papers on the List： 0 Unfold All

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