The　transparent　conductive　Al-doped　ZnO　(AZO)　films　were　deposited　by　RF　magnetron　sputtering　of　ZnO　target　mixed　with　Al　2O　3　(2%　Al　2O　3(wt))　on　silica　substrates　at　room　temperature.　The　impacts　of　the　growth　conditions　on　its　microstructures　and　properties　were　evaluated.　And　the　AZO　films　were　characterized　with　X-ray　diffraction,　scanning　electron　microscopy,　and　conventional　surface　probes.　The　results　show　that　the　film　thickness　strongly　affects　its　resistivity　and　transmittance　of　the　(002)　preferentially　oriented　AZO　films,　and　that　its　resistivity　also　depends　on　the　pressure　and　sputtering　power.　Under　the　optimized　conditions:　1　kW,　0.052　Pa,　the　resistivity　of　the　AZO　films,　250　nm　in　thickness,　was　found　to　be　8.38×10　-4　Ω·cm,　with　a　transmittance　of　89%　at　a　wavelength　of　550　nm,　pretty　close　to　92%　of　the　substrate.　The　1125　nm　thick　film　displayed　the　lowest　resistivity　of　6.16×10　-4　Ω·cm.