Hf-doped　ZnO　thin　films　with　different　Hf　contents　of　target　(Hf　xZn1-xO　0　≤　x　≤　10　at.%)　were　deposited　on　flexible　PET　substrates　under　different　oxygen　pressure　using　pulsed　laser　deposition.　Microstructures,　optical　and　electrical　properties　of　the　films　were　studied.　The　results　show　that　the　as-deposited　HfxZn1-xO　(0　≤　x　≤　5　at.%)　films　crystallized　in　ZnO　hexagonal　wurtzite　structure　with　a　highly　preferred　c-axis　orientation.　The　films　exhibited　a　transmission　of　higher　than　80　%　in　the　visible　region.　With　increasing　Hf　content,　the　lattice　constants　increased;　the　morphology　of　the　films　deteriorated.　The　sheet　resistance　reached　a　minimum　value　of　16　Ω/□　when　the　doping　level　was　about　0.5　at.%.　©　2012　Springer　Science+Business　Media,　LLC.